Wafer bonding technology for optoelectronic integration

Author

Wada, Hiroshi ; Kamijoh, Takeshi

Author_Institution

Real World Comput. Partnership, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

32

Abstract

Integration of III-V optical devices on Si is an essential technology to realize optoelectronic VLSIs. We have been investigating wafer bonding as a key technology to integrate InGaAsP/InP lasers on Si and fabricated edge-emitting and surface-emitting lasers on Si. In this report, we review the bonding technology and discuss the laser fabrication and characteristics

Keywords

III-V semiconductors; VLSI; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; semiconductor lasers; surface emitting lasers; wafer bonding; III-V optical device; InGaAsP-InP; Si; Si substrate; edge-emitting laser; fabrication; optoelectronic VLSI; optoelectronic integration; surface-emitting laser; wafer bonding technology; Indium phosphide; Mirrors; Optical device fabrication; Optical surface waves; Substrates; Surface cleaning; Surface emitting lasers; Surface treatment; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645221

Filename

645221