Title :
Using GaAs compliant universal substrates for 1.3 μm photonic devices
Author :
Zhu, Z.H. ; Ejeckam, F.E. ; Zhang, Z. ; Zhang, J. ; Lo, Y.H. ; Hou, H.Q. ; Hammons, B.E.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
There exists an increasing effort to fabricate 1.3/1.55 μm devices on GaAs substrates because GaAs substrates are less expensive, larger, and of better quality than InP substrates. In this paper, we report, for the first time, the use of our newly developed GaAs compliant universal (CU) substrate technology to grow 1.3 μm multi-quantum-wells. Both the structural and optical characteristics of the quantum wells are significantly better than the quantum wells grown on a conventional bulk GaAs substrate
Keywords :
III-V semiconductors; gallium arsenide; infrared sources; optical communication equipment; optical fabrication; semiconductor quantum wells; substrates; vapour phase epitaxial growth; 1.3 μm photonic devices; 1.3 mum; 1.55 mum; GaAs; GaAs compliant universal substrates; GaAs substrates; InP; optical characteristics; structural characteristics; Buffer layers; Capacitive sensors; Gallium arsenide; Laser excitation; Lattices; Photoluminescence; Plastics; Radiative recombination; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645224
