Using GaAs compliant universal substrates for 1.3 μm photonic devices

Author

Zhu, Z.H. ; Ejeckam, F.E. ; Zhang, Z. ; Zhang, J. ; Lo, Y.H. ; Hou, H.Q. ; Hammons, B.E.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

36

Abstract

There exists an increasing effort to fabricate 1.3/1.55 μm devices on GaAs substrates because GaAs substrates are less expensive, larger, and of better quality than InP substrates. In this paper, we report, for the first time, the use of our newly developed GaAs compliant universal (CU) substrate technology to grow 1.3 μm multi-quantum-wells. Both the structural and optical characteristics of the quantum wells are significantly better than the quantum wells grown on a conventional bulk GaAs substrate

Keywords

III-V semiconductors; gallium arsenide; infrared sources; optical communication equipment; optical fabrication; semiconductor quantum wells; substrates; vapour phase epitaxial growth; 1.3 μm photonic devices; 1.3 mum; 1.55 mum; GaAs; GaAs compliant universal substrates; GaAs substrates; InP; optical characteristics; structural characteristics; Buffer layers; Capacitive sensors; Gallium arsenide; Laser excitation; Lattices; Photoluminescence; Plastics; Radiative recombination; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645224

Filename

645224