DocumentCode
3263574
Title
Simulation Design of a Low-Noise Amplifier for 3.1-10.6 GHz Ultra-Wideband Wireless Receivers
Author
Qishui, Zhong ; Jingfu, Bao ; Songbai, He
Author_Institution
Sch. of Electron. Eng., Univ. of Electron. Sci. & Technol., Chengdu
Volume
1
fYear
2006
fDate
38869
Firstpage
151
Lastpage
153
Abstract
An ultra-wideband (UWB) hybrid low noise amplifier (LNA) is presented. The topology is a two-stage amplifier including a bandpass Chebychev LC filter and a source-follower buffer. The bandpass filter works as input matching network to give an acceptable reflection coefficient and a small amount DC power. Gain flatness is achieved mainly by the two transistors with matching network between stages. And the slight source negative feedback inductors are designed to facilitate input impedance and noise matching. The proposed UWB amplifier is implemented with gallium arsenide (GaAs) field effect transistors and a Rogers´s substrate (RO4003). The LNA gives 18.2 dB gain flatting, a minimum noise figure (NF) of 1.2 dB, input and output reflection coefficient better than - 12 dB within 2 dB from 3.1 to 10.6 GHz
Keywords
field effect transistors; gallium arsenide; low noise amplifiers; radio receivers; ultra wideband communication; 3.1 to 10.6 GHz; GaAs; LNA; RO4003; Rogers´s substrate; bandpass Chebychev LC filter; field effect transistors; gallium arsenide; low-noise amplifier; slight source negative feedback inductors; source-follower buffer; topology; ultra-wideband wireless receivers; Acoustic reflection; Band pass filters; FETs; Gallium arsenide; Impedance matching; Inductors; Low-noise amplifiers; Negative feedback; Network topology; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications, Circuits and Systems Proceedings, 2006 International Conference on
Conference_Location
Guilin
Print_ISBN
0-7803-9584-0
Electronic_ISBN
0-7803-9585-9
Type
conf
DOI
10.1109/ICCCAS.2006.284607
Filename
4063851
Link To Document