Advanced Cu barrier/seed development for 65nm technology and beyond

Author

Ding, Peijun ; Gopalraja, Prabu ; Fu, Jianming ; Yu, Jick ; Xu, Zheng ; Chen, Fusen

Author_Institution

Appl. Mater., Santa Clara, CA, USA

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

486

Abstract

A novel PVD sputtering source has been developed based on a high power-density concept. The new sputtering source dramatically increases the metal ion traction which improves TaN/Ta barrier and Cu seed step coverage and gap fill capability in Cu metallization. Successful ECP gap fill has been achieved on the most aggressive features currently available - 0.08μm 6:1 aspect ratio vias - when a 300Å Cu seed layer is deposited with this new source. Electrical test results based on the testing structure of 90nm technology node including parametric and stress migration, are equivalent or better than current processes. The new source will further extend the lifetime of PVD in the IC industry.

Keywords

copper; metallisation; nanotechnology; semiconductor technology; sputter deposition; tantalum compounds; 0.08 micron; 300 Å; Cu; Cu metallization; Cu seed layer deposition; Cu seed step coverage; ECP gap fill; PVD lifetime; PVD sputtering source; TaN-Ta; TaN-Ta barrier; advanced Cu barrier development; advanced Cu seed development; aspect ratio vias; gap fill capability; metal ion traction; stress migration; Atherosclerosis; Ionization; Magnetic flux; Plasma applications; Plasma measurements; Plasma sources; Robustness; Sputtering; Stress; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435053

Filename

1435053