Title :
Low frequency electrical noise characteristics of broad area 808 nm semiconductor laser diodes
Author :
Morgan, J. ; Harrison, I. ; Dods, S.R.A. ; Andrianov, A.V. ; Orton, J.W. ; Larkin, E.C. ; Nagle, J. ; Asonen, H. ; Nappi, J. ; Esquivias, I. ; Arias, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
Abstract :
We have investigated the noise behaviour of gallium arsenide based broad area laser diodes using a self made ´portable´ noise apparatus, which gives a noise detection floor of 2nV/√√Hz. We present a model for the noise system that allows subtraction of system background. This background subtraction takes into account the changes in differential resistance with bias that are inherent in semiconductor laser diodes. The variation of electrical noise with respect to material (i.e. aluminium containing and aluminium free lasers), device size, temperature and bias current was studied. All measurements were made over the range 100 Hz-10 kHz and at biasing currents significantly below the lasing threshold of the diodes
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser noise; semiconductor lasers; 100 Hz to 10 kHz; 808 nm; AlGaAs; GaAs; background subtraction; broad area semiconductor laser diode; differential resistance; low frequency electrical noise; portable apparatus; Aluminum; Background noise; Diode lasers; Electric resistance; Frequency; Gallium arsenide; Low-frequency noise; Optical materials; Semiconductor device noise; Semiconductor materials;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645258
