Title :
Effective bond strength of pyrex thin film TE bonds for microstructure applications
Author :
Stratton, T.G. ; Burns, D.W. ; Speldrich, B.D.
Author_Institution :
Sensor & Syst. Dev. Center, Honeywell Inc., Bloomington, MN, USA
Abstract :
Thermoelectric (TE) bonds between two silicon wafers have been formed using sputtered Pyrex films. The bond area was defined by patterning and etching reliefs into a silicon wafer. The bond geometry was varied from square to circular annuli with varying widths, diameters, and corner rounding. Bond strengths were determined as a faction of bond shape and size. From rupture pressure measurements an empirical statistical model which allows prediction of bond strength as a function of bond geometry has been developed for thin film TE bonds.<>
Keywords :
adhesion; borosilicate glasses; elemental semiconductors; mechanical strength; mechanical testing; silicon; sputtered coatings; thermoelectricity; wafer bonding; B/sub 2/O/sub 3/-SiO/sub 2/; Si; bond geometry; bond strength; bond strength prediction; circular annuli; corner rounding; empirical statistical model; etching; microstructure applications; patterning; pyrex thin film; rupture pressure measurements; semiconductors; sputtered coatings; thin film thermoelectric bonds; Geometry; Semiconductor films; Shape; Silicon; Sputter etching; Sputtering; Tellurium; Thermoelectricity; Transistors; Wafer bonding;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
DOI :
10.1109/SOLSEN.1992.228270
