DocumentCode :
3264168
Title :
A Shallow-´ikench Isolation Study For 0.18pm Cmos Technology With Emphasis On The Effects Of Well Design, Channel-stop Implants, Trenchl Depth, And Salicide Process
Author :
Murtaza, Syed Shariyar ; Chatterjee, A. ; Mei, Paul ; Amerasekera, A. ; Nicollian, P. ; Kittl, J. ; Breedijk, T. ; Hanratty, M. ; Nag, S. ; Ali, I. ; Rogers, D. ; Chen, I.C.
fYear :
1997
fDate :
3-5 June 1997
Firstpage :
133
Lastpage :
137
Keywords :
CMOS process; CMOS technology; Capacitance; Chemical processes; Chemical technology; Implants; Instruments; Isolation technology; Measurement; Meeting planning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
ISSN :
1524-766X
Print_ISBN :
0-7803-4131-7
Type :
conf
DOI :
10.1109/VTSA.1997.614744
Filename :
614744
Link To Document :
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