Title :
Single crystal silicon nanomechanisms for scanned-probe device arrays
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The authors discuss the fabrication and operation of movable, integrated nanostructure mechanisms that produce precision motion. Two single crystal silicon (SCS) processes are outlined: COMBAT and SCREAM-I. Examples of self supporting, movable single crystal silicon springs and electric-field drive structures and probes (tips) with dimensions as small as 20 nanometers are described. These integrated devices include integrated resonant mass sensors, precision x-y stages for instrument and sensor applications including scanned-probed structures. Movable mechanical structures with cross-sectional dimensions of 150 nm*1000 nm have been fabricated using single crystal silicon. The nanofabrication process includes high resolution e-beam lithography, anisotropic reactive ion etching, and selective oxidation of silicon. The mechanical resonant frequency for these nanomechanical structures can be greater than 5 MHz.<>
Keywords :
electric sensing devices; elemental semiconductors; integrated circuit technology; lithography; micromechanical devices; nanotechnology; oxidation; probes; resonators; semiconductor technology; silicon; sputter etching; 20 nm; 5 MHz; COMBAT; SCREAM-I; SEM; anisotropic reactive ion etching; e-beam lithography; electric-field drive; integrated resonant mass sensors; mechanical resonant frequency; mechanical structures; nanofabrication; nanomechanisms; scanned-probe device arrays; selective oxidation; single crystal Si; springs; tips; Fabrication; Instruments; Lithography; Mechanical sensors; Nanofabrication; Nanoscale devices; Probes; Resonance; Silicon; Springs;
Conference_Titel :
Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE
Conference_Location :
Hilton Head Island, SC, USA
Print_ISBN :
0-7803-0456-X
DOI :
10.1109/SOLSEN.1992.228289