Effects Of Hydrogen Annealing On Data Retention Time For High Density Drams

Author

Hsia, L.C. ; Chang, Thomas ; Chang, S.J. ; Fan, D. ; Wei, H.Y. ; Jan, Jack

fYear

1997

fDate

3-5 June 1997

Firstpage

142

Lastpage

147

Keywords

Annealing; Dielectric substrates; Diodes; Gettering; Hydrogen; Leakage current; Lifting equipment; Random access memory; Silicon; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-4131-7

Type

DOI

10.1109/VTSA.1997.614746

Filename

614746

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