Title :
Effects Of Hydrogen Annealing On Data Retention Time For High Density Drams
Author :
Hsia, L.C. ; Chang, Thomas ; Chang, S.J. ; Fan, D. ; Wei, H.Y. ; Jan, Jack
Keywords :
Annealing; Dielectric substrates; Diodes; Gettering; Hydrogen; Leakage current; Lifting equipment; Random access memory; Silicon; Tail;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614746
