High performance resonant tunneling diode on a new material structure

Author

Jianlin, Wang ; Zhongli, Liu ; Liangchen, Wang ; Yiping, Zeng ; Fuhua, Yang ; Yunxia, Bai

Author_Institution

Inst. of Semicond., Chinese Acad. of Sci., Beijing, China

Volume

1

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

648

Abstract

A new material structure with Al_0.22Ga_0.78As/In_0.15Ga_0.85As/GaAs emitter spacer layer and GaAs/In_0.15Ga_0.85As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio (PVCR) is 7.44 for RTD analysis on these results suggests that the material structure will be helpful to improve the quality of RTD.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum interference phenomena; resonant tunnelling diodes; semiconductor quantum wells; Al_0.22Ga_0.78As-In_0.15Ga_0.85As-GaAs; Al_0.22Ga_0.78As/In_0.15Ga_0.85As/GaAs emitter spacer layer; DC characterization; GaAs-In_0.15Ga_0.85As-GaAs; GaAs/In_0.15Ga_0.85As/GaAs well; RTD analysis; peak-to-valley current ratio; quantum effect; resonant tunneling diode; Conducting materials; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Resonance; Resonant tunneling devices; Semiconductor diodes; Semiconductor materials; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435088

Filename

1435088