DocumentCode

3265085

Title

Integrated Ferroelectric Technology For Nonvolatile

Author

Sumi, Tatsumi

fYear

1997

fDate

3-5 June 1997

Firstpage

157

Lastpage

161

Keywords

CMOS process; Conducting materials; EPROM; Electrodes; Ferroelectric materials; Nonvolatile memory; Random access memory; Stress; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location

Taipei, Taiwan

ISSN

1524-766X

Print_ISBN

0-7803-4131-7

Type

conf

DOI

10.1109/VTSA.1997.614749

Filename

614749