DocumentCode
3265283
Title
Electronic states of InAs vertically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit
Author
Dong, Qing-Rui ; Niu, Zhi-Chuan
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
761
Abstract
We have studied the single-electron and two-electron vertically-assembled quantum disks in an axial magnetic field using the effective mass approximation. The electron interaction is treated accurately by the direct diagonalization of the Hamiltonian matrix. We calculate the six energy levels of single-electron quantum disks and the two lowest energy levels of two-electron quantum disks in an axial magnetic field. The change of the magnetic field as an effective potential strongly modifies the electronic structures, leading to splittings and crossings between levels. The results demonstrate the switching between the ground slates with the total spins S=0 and S = 1. The switching results in a qubit allowed fabricating by current growth techniques.
Keywords
III-V semiconductors; effective mass; indium compounds; magnetic fields; semiconductor quantum dots; Hamiltonian matrix; InAs; axial magnetic field; effective mass approximation; electron interaction; electronic states; energy levels; single-electron quantum disks; two-electron quantum-disk qubit; vertically-assembled quantum disks; Gallium arsenide; Laboratories; Magnetic field induced strain; Magnetic fields; Magnetic superlattices; Microstructure; Quantum computing; Quantum dot lasers; Quantum dots; Semiconductor superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435114
Filename
1435114
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