Electrically evoked compound action potential (ECAP) stimulus-artefact (SA) blanking low-power low-noise CMOS amplifier

Author

Wheatley, Dean ; Lehmann, Torsten

Author_Institution

Cochlear Ltd., Sydney

fYear

2007

fDate

5-8 Aug. 2007

Firstpage

41

Lastpage

44

Abstract

A low-power and low-noise CMOS OTA-based amplifier which minimises stimulus artefacts (SAs) in electrically evoked compound action potential (ECAP) measurements is presented. The amplifier is to be incorporated into an electrical stimulation epi-retinal vision prothesis ECAP measurement system. The amplifier has four gain settings (50, 60, 70, 80 dB) over a 7.4-9.9 kHz bandwidth, an input-referred noise of 5.6 muV_rms (0.1-10 kHz) and consumes only 12.6 muA quiescent current. The amplifier is simulated using a high voltage 0.35 mum CMOS process and demonstrates an excellent tradeoff of key performance measures.

Keywords

CMOS integrated circuits; bioelectric potentials; low noise amplifiers; low-power electronics; CMOS process; OTA-based amplifier; bandwidth 7.4 kHz to 9.9 kHz; current 12.6 muA; electrical stimulation epiretinal vision prothesis; electrically evoked compound action potential; gain 50 dB; gain 60 dB; gain 70 dB; gain 80 dB; low-power low-noise CMOS amplifier; size 0.35 mum; stimulus-artefact; 1f noise; Australia; Bandwidth; Blanking; High power amplifiers; Low voltage; Low-frequency noise; Low-noise amplifiers; MOSFETs; Prosthetics;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on

Conference_Location

Montreal, Que.

ISSN

1548-3746

Print_ISBN

978-1-4244-1175-7

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2007.4488536

Filename

4488536