• DocumentCode
    3265641
  • Title

    Ultra-thin Nitride/oxide Stack Dielectric Produced By In-situ Jet Vapor Deposition

  • Author

    Shi, Y. ; Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Halpern, B.L. ; Schmitt, J.J.

  • fYear
    1997
  • fDate
    3-5 June 1997
  • Firstpage
    172
  • Lastpage
    176
  • Keywords
    Chemical vapor deposition; Dielectric substrates; Furnaces; High-K gate dielectrics; Leakage current; Oxidation; Random access memory; Silicon; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
  • Conference_Location
    Taipei, Taiwan
  • ISSN
    1524-766X
  • Print_ISBN
    0-7803-4131-7
  • Type

    conf

  • DOI
    10.1109/VTSA.1997.614752
  • Filename
    614752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3265641