Title :
A high efficiency full-wave rectifier in standard CMOS Technology
Author :
Bawa, Gaurav ; Jow, Uei-Ming ; Ghovanloo, Maysam
Author_Institution :
North Carolina State Univ., Raleigh
Abstract :
In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.
Keywords :
CMOS integrated circuits; power conversion; rectifiers; voltage control; AC input sinusoid; dynamic voltage control; full-wave integrated voltage rectifier; n-well regions; power conversion; rectifying PMOS; size 0.5 mum; standard CMOS technology; voltage 4.36 V; voltage 5 V; Battery charge measurement; CMOS process; CMOS technology; Circuits; Coils; Diodes; MOSFETs; Rectifiers; Threshold voltage; Voltage control;
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
978-1-4244-1175-7
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2007.4488545
