A high efficiency full-wave rectifier in standard CMOS Technology

Author

Bawa, Gaurav ; Jow, Uei-Ming ; Ghovanloo, Maysam

Author_Institution

North Carolina State Univ., Raleigh

fYear

2007

fDate

5-8 Aug. 2007

Firstpage

81

Lastpage

84

Abstract

In this paper, a high efficiency full-wave integrated voltage rectifier, implemented in AMI 0.5-mum 3M/2P n-well standard CMOS process, is presented. The rectifier takes advantage of the dynamic voltage control of separated n-well regions, where the main rectifying PMOS elements have been implemented, to eliminate latchup and body effect. In measurements, an AC input sinusoid of 5 V peak at 0.5 MHz yield a 4.36 V DC output across a 1 kOmega load, resulting in a measured power conversion efficiency of 85%.

Keywords

CMOS integrated circuits; power conversion; rectifiers; voltage control; AC input sinusoid; dynamic voltage control; full-wave integrated voltage rectifier; n-well regions; power conversion; rectifying PMOS; size 0.5 mum; standard CMOS technology; voltage 4.36 V; voltage 5 V; Battery charge measurement; CMOS process; CMOS technology; Circuits; Coils; Diodes; MOSFETs; Rectifiers; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on

Conference_Location

Montreal, Que.

ISSN

1548-3746

Print_ISBN

978-1-4244-1175-7

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2007.4488545

Filename

4488545