Title :
A packaged MOS power device with an integral protection chip
Author :
Mietus, David F. ; Clark, Lowell E. ; Davies, Robert B.
Author_Institution :
Motorola Semicond. Products Sector, Phoenix, AZ, USA
Abstract :
A packaged MOS power device having a protective integrated circuit mounted on the gate lead of the package is described. The protective circuit prevents gate overvoltage and provides for rapid gate discharge during commutation, overtemperature, or overvoltage in the on-state
Keywords :
commutation; metal-insulator-semiconductor devices; overcurrent protection; packaging; power electronics; IGBT; MOSFET; commutation; gate discharge; gate lead; gate overvoltage; integral protection chip; overtemperature; packaged MOS power device; packaging; power electronics; power transistors; Assembly; Bipolar integrated circuits; Commutation; Insulated gate bipolar transistors; Integrated circuit packaging; Integrated circuit technology; Lead compounds; Protection; Semiconductor device packaging; Thyristors;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1992. APEC '92. Conference Proceedings 1992., Seventh Annual
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-0485-3
DOI :
10.1109/APEC.1992.228380
