A high linearity SiGe BiCMOS power amplifier for 2.4GHz wireless communications

Author

Tian Liang ; Zhou Jin ; Huang Aibo ; Ruan Ying ; Chen Lei ; Lai Zongsheng

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

356

Lastpage

359

Abstract

A high linearity power amplifier (PA) is demonstrated for wireless communications at 2.4 GHz and is implemented in a 0.18 Â¿m silicon germanium (SiGe) BiCMOS process. This PA is composed of two stages and achieves a good performance on linearity: when the input power is 0 dBm, the output 1 dB compression point (OP1 dB) is 20.3 dBm, which is only about 0.7 dBm less than the output power. The layout area of this PA is 1.1Ã—1.3 mm².

Keywords

BiCMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; radiocommunication; Silicon Germanium BiCMOS process; frequency 2.4 GHz; high linearity SiGe BiCMOS power amplifier; size 0.18 mum; wireless communications; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Linearity; Power amplifiers; Radio frequency; Silicon germanium; Wireless communication; SiGe BiCMOS; linearity; power amplifier; wireless communications;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397371

Filename

5397371