DC-contact RF MEMS switches with bias physically insulated from RF signal

Author

Zhu, Jian ; Zhou, Bai-Ling ; Yu, Yuan-Wei ; Jia, Shi-Xing ; Le Lu ; Shan, Yun-Dong

Author_Institution

Dept. of Instrum. Sci. & Eng., Southeast Univ., Nanjing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1699

Abstract

Cantilever beam DC-contact RF MEMS switches, with bias electrodes physically insulated from the RF/microwave transmission line (t-line), have been developed for broadband communication system applications. The paper presents the design, optimization and equivalent circuit model for the MEMS switches. The beam is composed of multilayer thin films formed by a slightly tensile stressed dielectric and metal layer. A MEMS switch sample has been fabricated based on a low temperature surface micromachining process. On-wafer measurement results are as follows: insertion loss less than 0.8 dB; isolation more than 26 dB at 0.1-26 GHz; applied voltage 30-80 V.

Keywords

circuit optimisation; dielectric thin films; equivalent circuits; metallic thin films; micromachining; microswitches; microwave switches; multilayers; telecommunication equipment; 0.1 to 26 GHz; 30 to 80 V; DC-contact RF MEMS switches; RF transmission line; applied voltage; bias electrodes; broadband communication system; cantilever beam MEMS switches; equivalent circuit model; insertion loss; isolation; low temperature surface micromachining; microwave transmission line; multilayer thin films; stressed dielectric-metal layer; Communication switching; Dielectric loss measurement; Dielectric thin films; Dielectrics and electrical insulation; Electrodes; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Structural beams; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435159

Filename

1435159