مرکز منطقه ای اطلاع رساني علوم و فناوري - The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications

DocumentCode :

3266403

Title :

The Use Of Jet-vapor Deposited Silicon Nitride For Scaled Dram Applications

Author :

Guo, X. ; Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Halpern, B.L. ; Schmitt, J.J.

fYear :

1997

fDate :

3-5 June 1997

Firstpage :

193

Lastpage :

197

Keywords :

Annealing; Capacitors; DRAM chips; Dielectric substrates; Electrodes; Leakage current; Nitrogen; Random access memory; Semiconductor films; Silicon;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location :

Taipei, Taiwan

ISSN :

1524-766X

Print_ISBN :

0-7803-4131-7

Type :

conf

DOI :

10.1109/VTSA.1997.614756

Filename :

614756

Link To Document :