Research of sector split-drain MAGFET (structure and model) based on standard 0.6um N-well CMOS technology

Author

Dazhong, Zhu ; Yunruo, Yao

Author_Institution

Inst. of Microelectron. Technol. Syst. Design, Zhejiang Univ., Hangzhou, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1711

Abstract

In this paper, a new structure of sector split-drain MAGFET, based on CSMC standard 0.6 μm N-well CMOS technology, is suggested and its model is also developed. The relationship of its relative sensitivity with device geometry parameters is obtained by computer simulation. A maximum sensor sensitivity of 3.77%/T is obtained in experimental results with an offset value lower than 0.27%. Improvement of sensitivity is attributed to the sector structure.

Keywords

CMOS integrated circuits; field effect transistors; magnetic sensors; semiconductor device models; 0.6 micron; N-well CMOS technology; magnetic sensor CMOS IC; maximum sensor sensitivity; relative sensitivity/device geometry relationship; sector split-drain MAGFET; split-drain magnetic field effect transistor; CMOS integrated circuits; CMOS technology; FET integrated circuits; Geometry; Lorentz covariance; Magnetic field measurement; Magnetic fields; Magnetic sensors; Mathematical model; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435162

Filename

1435162