DocumentCode
3266421
Title
6.1 W cw power, Al-free active region diode lasers at 0.805 μm
Author
Wade, J.K. ; Mawst, L.J. ; Botez, D. ; Nabiev, R.F. ; Jansen, M. ; Morris, J.A.
Author_Institution
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume
2
fYear
1997
fDate
10-13 Nov 1997
Firstpage
197
Abstract
100 μm-wide, 1 mm-long, 0.805 μm-emitting, Al-free active region diode lasers with 10%/90% AR/HR facet coatings provide 6.1 W cw power at a heat sink temperature of T=10°C. The corresponding internal power density at COMD, P¯COMD, is ~15 MW/cm2; almost twice the P¯COMD value, ~8 MW/cm2, for similarly designed AlGaAs based devices
Keywords
laser reliability; life testing; quantum well lasers; 0.805 micron; 1 mm; 100 micron; 6.1 W; AR/HR facet coatings; Al-free active region diode lasers; CW power lasers; catastrophic optical mirror damage; heat sink temperature; high power lasers; internal power density; lattice matched quantum well; solid state laser pump sources; Coatings; Diode lasers; Gallium arsenide; Mirrors; Optical losses; Optical waveguides; Photonic band gap; Power generation; Power system reliability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.645355
Filename
645355
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