780 nm emitting Al-free active region diode lasers with compressively-strained InGaAsP quantum wells

Author

Al-Muhanna, A. ; Wade, J.K. ; Mawst, L.J. ; Fu, R.J.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

201

Abstract

Summary form only given. 0.78 μm, Al-free active-region, compressively-strained (Δa/a=0.85%) InGaAsP quantum well diode lasers have been grown by MOCVD. Broad-stripe (100 μm-wide) devices exhibit low threshold current densities, 290 A/cm² (L=1 mm), and cw front-facet output powers of 2.2 W

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; vapour phase epitaxial growth; 100 mum; 2.2 W; Al-free active region diode lasers; Al-free active-region; InGaAsP; InGaAsP quantum well diode lasers; InGaAsP quantum well lasers; MOCVD growth; broad-stripe devices; compressively-strained; cw front-facet output powers; low threshold current densities; Conferences; Diode lasers; Laser theory; Lasers and electrooptics; Notice of Violation; Optical design; Physics; Quantum well lasers; Semiconductor diodes; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645357

Filename

645357