Design of CMOS magnetic sensor integrated circuit

Author

Guo ing ; Dazhong, Zhu ; Yunruo, Yao

Author_Institution

Dept. of Electr. Eng., Zhejiang Univ., Hangzhou, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

1723

Abstract

A new CMOS magnetic sensor integrated circuit has been developed in a 0.6 μm CMOS technology. The single chip integration of the split-drain magnetic field-effect transistor (MAGFET) and the subsequent signal processing circuits are realized. With the pre-processing circuit and correlated double sampling (CDS) circuits, the fixed pattern noise (FPN) is greatly reduced. The MAGFET is sectorial, with a radius of 48 μm and an angle of 90°. The relative sensitivity of the magnetic sensor can be 87.3 mV/(T·μs).

Keywords

CMOS integrated circuits; magnetic sensors; microsensors; mixed analogue-digital integrated circuits; signal sampling; 48 micron; CDS circuits; CMOS magnetic sensor; correlated double sampling circuits; fixed pattern noise reduction; magnetic field-effect transistor; magnetic sensor IC; mixed-signal processing circuits; sectorial MAGFET radius; split-drain MAGFET; CMOS integrated circuits; CMOS technology; FETs; Integrated circuit technology; Magnetic circuits; Magnetic fields; Magnetic sensors; Noise reduction; Signal processing; Signal sampling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435165

Filename

1435165