High figure-of-merit vertical double diffused MOSFET with the charge trenches on partial SOI

Author

Ye, H. ; Su, W. ; Zhang, B. ; Li, Z.J. ; Qiao, M.

Author_Institution

Inst. of Electron. Eng., China Acad. of Eng. Phys., Mianyang, China

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

137

Lastpage

140

Abstract

A novel silicon-on-insulator (SOI) high figure-of-merit vertical double diffused MOSFET (VDMOS) structure and its breakdown mechanism are presented in this paper. The structure is characterized by oxide trenches on the top interface of the buried oxide layer on partial SOI (TPSOI). The accumulation charges located in the trenches enhance the electric field in the buried oxide layer and uniform the electric field in the drift region, therefore the breakdown voltage (V_br) is enhanced. Simulation shows that the V_br and the figure-of-merit of the TPSOI VDMOS increase by 66.8% and 148.1% in comparison with the conventional VDMOS, respectively.

Keywords

MOSFET; buried layers; electric charge; power semiconductor devices; semiconductor device breakdown; silicon-on-insulator; VDMOS structure; breakdown voltage; buried oxide layer; charge trenches; electric field; high figure-of-merit vertical double diffused MOSFET; oxide trenches; partial SOI; silicon-on-insulator; Electric breakdown; Impedance; Laboratories; MOSFET circuits; Permittivity; Physics; Power MOSFET; Silicon on insulator technology; Thermal stability; Thin film devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397427

Filename

5397427