DocumentCode :
3267189
Title :
MEMS- and probe-based mass data storage in conventional CMOS
Author :
Lu, Michael S-C ; Min, Seungook ; Tzeng, Shien-Der ; Gwo, Shangjr
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
3
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
1842
Abstract :
Non-volatile mass data storage using MEMS-based actuation and probe-based read/write has great potential to replace conventional semiconductor memories because of the achieved high areal density. From the standpoint of system implementation, the complexity for integration of all functional electronics in such a micro disk drive is enormously reduced by using CMOS-MEMS as the core implementing technology. In this paper, we present the latest progress in the MRM-based and the EFM-based storage devices that are currently under development.
Keywords :
CMOS integrated circuits; atomic force microscopy; magnetoresistive devices; micromechanical devices; probes; random-access storage; CMOS; EFM-based storage devices; MEMS-based actuation; MEMS-based mass data storage; MRM; electrostatic force microscopy; high areal density; magneto-resistive microscopy; micro disk drive; nonvolatile mass data storage; probe-based mass data storage; probe-based read/write; Actuators; Disk drives; Magnetic devices; Magnetic force microscopy; Magnetic heads; Materials science and technology; Nonvolatile memory; Physics; Servomechanisms; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435194
Filename :
1435194
Link To Document :
بازگشت