Title :
A 3.5 GHz CMOS Doherty power amplifier with integrated diode linearizer targeted for WiMax applications
Author :
Xian Cui ; Roblin, P. ; Jongsoo Lee ; Wan Rone Liou ; Young Gi Kim
Author_Institution :
Ohio State Univ., Columbus
Abstract :
In this work, a novel integrated Doherty power amplifier in 0.18 mum CMOS process is presented for potential WiMax applications at 3.5 GHz. Doherty configuration with cascode transistors is adopted to achieve high efficiency and output power. The integrated diode linearizer is first demonstrated to use on the cascode transistor to improve the linearity of Doherty PA. The proposed power amplifier provides a maximum output power of 24.44 dBm and a power added efficiency (PAE) as high as 43% at 3.5 GHz operation frequency. At 1-dB compression point this PA exhibits 23.63 dBm of output power with 36.1% PAE. The third order inter-modulation (IMD3) comparison obtained from two-tone test, reveals the linearity improvement from the diode linearizer. Layout and corner simulations results are also included.
Keywords :
CMOS integrated circuits; WiMax; intermodulation; power amplifiers; transistors; CMOS process; Doherty power amplifier; WiMAX application; cascode transistor; frequency 3.5 GHz; integrated diode linearizer; power added efficiency; size 0.18 mum; third order intermodulation; CMOS process; Diodes; Frequency; High power amplifiers; Linearity; Operational amplifiers; Power amplifiers; Power generation; Testing; WiMAX;
Conference_Titel :
Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
Conference_Location :
Montreal, Que.
Print_ISBN :
978-1-4244-1175-7
DOI :
10.1109/MWSCAS.2007.4488629
