A very high Q-factor inductor using MEMS technology

Author

Khalid, N. ; Singh, J. ; Le, H.P. ; Devlin, J. ; Sauli, Z.

Author_Institution

La Trobe Univ., Bundoora, VIC, Australia

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

77

Lastpage

80

Abstract

This paper presents the design and optimisation of a very high quality (Q) factor inductor using MEMS technology for 10 GHz to 20 GHz frequency band. The effects of various parameters of a symmetric inductor structure on the Q-factor and inductance are thoroughly analysed. The inductor has been designed on silicon-on-sapphire (SOS) substrate because it offers superior characteristics of low substrate loss due to the high resistivity of the sapphire material and low capacitive coupling to the substrate. It is also been suspended from the substrate in order to reduce the substrate loss and improved the Q factor. Results indicate that a maximum Q factor of 192 for a 1.13 nH inductance at 12 GHz is achieved after optimising the symmetric inductor.

Keywords

Q-factor; inductors; micromechanical devices; microwave devices; sapphire; substrates; MEMS technology; Si-Al₂O₃; capacitive coupling; frequency 10 GHz to 20 GHz; high Q-factor inductor; high quality factor inductor; sapphire material; silicon-on-sapphire substrate; substrate loss; symmetric inductor structure; Design optimization; Inductance; Inductors; Integrated circuit noise; Micromechanical devices; Noise figure; Phase noise; Q factor; Radio frequency; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-4668-1

Electronic_ISBN

978-1-4244-4669-8

Type

conf

DOI

10.1109/PRIMEASIA.2009.5397444

Filename

5397444