Title :
A fully integrated VCO in 0.18-µm CMOS technology for a Bluetooth transceiver
Author :
Duan, Ji-hai ; Qin, Chao
Author_Institution :
Sch. of Inf. & Commun., Guilin Univ. of Electron. Technol., Guilin, China
Abstract :
A fully integrated voltage-controlled oscillator (VCO) in SMIC 0.18-μm 1P6M CMOS technology is presented in this paper. The linear tuning range of VCO is from 2.36GHz to 2.52 GHz. The post simulation results show that the phase noise of the proposed VCO is -118.4 dBc/Hz at 1 MHz offset from the carrier at 2.44 GHz, it meets the requirements for Bluetooth application standard, and the current dissipation of the VCO is 3 mA from the 1.8 V power supply.
Keywords :
Bluetooth; CMOS integrated circuits; transceivers; voltage-controlled oscillators; Bluetooth transceiver; CMOS technology; SMIC; current 3 mA; frequency 2.36 GHz to 2.52 GHz; frequency 2.44 GHz; integrated VCO; linear tuning range; size 0.18 micron; voltage 1.8 V; voltage-controlled oscillator; Bluetooth; CMOS technology; Circuits; Energy storage; Frequency; Inductors; Phase noise; Q factor; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-4668-1
Electronic_ISBN :
978-1-4244-4669-8
DOI :
10.1109/PRIMEASIA.2009.5397451
