Application of a high-voltage pumped supply for low-power DRAM

A pumped, regulated V/sub pp/ supply feeding static word-line driver circuits can be exploited in other areas of a DRAM, allowing increased flexibility in architecture and improving performance. A feedback loop sets the V/sub pp/ level to exactly that required to write a full ´1´ level to the memory cell, independent of process or operating condition. The need for double-boosted nodes is eliminated, making the V/sub pp/ level th highest voltage on the chip and easing voltage stress problems. The V/sub pp/ supply is also employed in a modulated input-threshold world-line repeater, which regenerates the world-line signal to overcome RC delay. Significant area savings can be realized in high-density DRAMs by multiplexing sense amplifiers between adjacent arrays, using n-channel isolation devices controlled by V/sub pp/ level signals. A final use of the regulated V/sub pp/ supply is in an n-channel only output buffer achieving full rail-to-rail swing.<>