Title :
A 2.5GHz BiCMOS low noise and high-gain differential LNA for WLAN receiver
Author :
Hua-Bin Zhang ; Cai, Min ; Wu, Heijim ; Chen, Hong-Lin
Author_Institution :
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
Abstract :
A 2.5 GHz BiCMOS differential LNA for WLAN front-end receiver is presented. The LNA is fabricated with a JAZZ 0.35 ¿m 1P4M SiGe BiCMOS process. The LNA provides a 50 ¿ input impedance and achieves good temperature characteristic. In the point of 2.5 GHz, the LNA exhibits a maximum small signal voltage gain of 29.1 dB, noise figure of 1.316 dB, input/output return loss better than 11 dB, and input IIP3 of -0.241 dBm, respectively. The LNA consumes 3.7 mA of current from a 3.0 V DC supply.
Keywords :
BiCMOS integrated circuits; low noise amplifiers; radio receivers; wireless LAN; 1P4M SiGe BiCMOS process; BiCMOS high-gain differential LNA; BiCMOS low noise differential LNA; JAZZ; WLAN receiver; frequency 2.5 GHz; front-end receiver; size 0.35 mum; voltage 3 V; BiCMOS integrated circuits; Consumer electronics; Germanium silicon alloys; Impedance; Inductors; MIM capacitors; Silicon germanium; Temperature; Voltage; Wireless LAN;
Conference_Titel :
Microelectronics & Electronics, 2009. PrimeAsia 2009. Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-4668-1
Electronic_ISBN :
978-1-4244-4669-8
DOI :
10.1109/PRIMEASIA.2009.5397453
