Oxide-confined VCSELs with quantum well and quantum dot active regions

Author

Deppe, D.G. ; Huffaker, D.L. ; Deng, Q. ; Oh, T.-H. ; Graham, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

287

Abstract

In this talk we will describe some recent results of low threshold VCSELs that show improved performance with the use of tunnel injection of electrons, and the application of quantum dot (QD) active regions. As the VCSEL active region size is reduced the threshold current density increases, and at high current densities loss of injected electrons over the p-type heterobarrier can both increase the lasing threshold and, due to insufficient Fermi-level clamping, reduce the VCSEL´s differential slope efficiency

Keywords

current density; laser cavity resonators; quantum well lasers; semiconductor quantum dots; surface emitting lasers; tunnelling; Fermi-level clamping; VCSEL active region size; differential slope efficiency; electron injection; high current densities; lasing threshold; low threshold VCSELs; oxide-confined VCSELs; p-type heterobarrier; quantum dot active regions; threshold current density; tunnel injection; Apertures; Contracts; Electrons; Gallium arsenide; Microelectronics; Quantum dots; Temperature; Threshold current; US Department of Transportation; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645421

Filename

645421