• DocumentCode
    3267831
  • Title

    Novel and simple table-based HBT large-signal model

  • Author

    Degachi, Louay ; Ghannouchi, Fadhel M.

  • Author_Institution
    Ecole Polytech. Montreal, Montreal
  • fYear
    2007
  • fDate
    5-8 Aug. 2007
  • Firstpage
    622
  • Lastpage
    625
  • Abstract
    A novel and simple table-based HBT large-signal model is presented. All parameters are tabulated as two- parameter functions. The model accounts for self-heating by allowing ideality factors and saturation currents to be functions of the dissipated power. Small-signal model parameters, systematically extracted from RF S-parameter measurements, are used in conjunction with DC measurements to extract static model parameters characterizing the forward active regime of operation. Such a procedure ensures consistency between small-signal and DC simulations. A 1x10 mum2 emitter-area InGaP/GaAs HBT device is used to validate the proposed model.
  • Keywords
    S-parameters; heterojunction bipolar transistors; semiconductor device models; RF S-parameter measurement; table-based HBT large-signal model; Analog integrated circuits; Computational modeling; Data mining; Gallium arsenide; Heterojunction bipolar transistors; Identity-based encryption; Power system modeling; Radio frequency; Scattering parameters; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2007. MWSCAS 2007. 50th Midwest Symposium on
  • Conference_Location
    Montreal, Que.
  • ISSN
    1548-3746
  • Print_ISBN
    978-1-4244-1175-7
  • Electronic_ISBN
    1548-3746
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2007.4488658
  • Filename
    4488658