Strong polarization selectivity in 780-nm vertical-cavity surface-emitting lasers grown on misoriented substrates

Author

Young-Gu Ju ; Yong-Hee Lee ; Hyun-Kuk Shin ; Il Kim

Author_Institution

Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

2

fYear

1997

fDate

10-13 Nov. 1997

Firstpage

291

Abstract

In this paper, we present the polarization characteristics of 780-nm VCSEL,s grown on a misoriented substrate and the gain loss difference between two polarizations through the measurement of subthreshold spectral linewidth. 780-nm quantum well VCSELs are grown on a 2-degree-off misoriented (001) substrate

Keywords

infrared sources; laser cavity resonators; laser transitions; light polarisation; optical losses; quantum well lasers; spectral line breadth; substrates; surface emitting lasers; 780 nm; VCSEL; gain loss difference; misoriented substrates; polarization characteristics; quantum well VCSELs; strong polarization selectivity; subthreshold spectral linewidth; vertical-cavity surface-emitting lasers; Anisotropic magnetoresistance; Capacitive sensors; Gain measurement; Laser stability; Laser theory; Physics; Polarization; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA, USA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645427

Filename

645427