Title :
A Si bipolar 1.4 GHz time space switch LSI for B-ISDN
Author :
Matsuda, O. ; Hayano, S. ; Takeuchi, T. ; Kitahata, H. ; Takemura, H. ; Tashiro, T.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The advanced active pull-down circuitry and the layout design technique to realize a high-speed, low-power LSI have been developed. A 32-channel broadband switch LSI operating at a 1.4-GHz clock-rate has been built to serve as a key component for B-ISDN systems. The total chip power dissipation is reduced by 60% compared with conventional ECL chips while avoiding the effect of cross talk noise. The chip area is reduced by 70% compared with a common standard cell structure.<>
Keywords :
B-ISDN; bipolar integrated circuits; digital integrated circuits; electronic switching systems; elemental semiconductors; large scale integration; semiconductor switches; silicon; 1.4 GHz; 32-channel broadband switch; B-ISDN; Si; active pull-down circuitry; high-speed; layout design; low-power LSI; time space switch LSI; B-ISDN; Circuit noise; Clocks; Delay; Fluctuations; Large scale integration; Power dissipation; Switches; Voltage; Wiring;
Conference_Titel :
VLSI Circuits, 1992. Digest of Technical Papers., 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0701-1
DOI :
10.1109/VLSIC.1992.229291
