• DocumentCode
    326801
  • Title

    Choosing a thermal model for electrothermal simulation of power semiconductor devices

  • Author

    Ammous, A. ; Ghedira, S. ; Allard, B. ; Morel, H.

  • Author_Institution
    Inst. Nat. des Sci. Appliquees, Villeurbanne, France
  • Volume
    2
  • fYear
    1998
  • fDate
    17-22 May 1998
  • Firstpage
    1668
  • Abstract
    The literature proposes some thermal models needed for the electrothermal simulation of power electronic systems. This paper gives a useful analysis about the choice of the thermal model circuit networks, equivalent to a discretisation of the heat equation by the finite difference method and the finite element method and an analytic model developed by applying an internal approximation of the heat diffusion problem. The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous particularly for large surges of short time duration
  • Keywords
    finite difference methods; finite element analysis; power semiconductor devices; semiconductor device models; surges; thermal analysis; analytic model; boundary condition; electrothermal simulation; finite difference method; finite element method; heat diffusion problem; heat equation discretisation; heat source; power electronic systems; power semiconductor devices; short time duration surges; temperature response; thermal model; thermal model circuit networks; Boundary conditions; Circuit simulation; Difference equations; Electrothermal effects; Finite difference methods; Finite element methods; Power electronics; Power system modeling; Surges; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1998. PESC 98 Record. 29th Annual IEEE
  • Conference_Location
    Fukuoka
  • ISSN
    0275-9306
  • Print_ISBN
    0-7803-4489-8
  • Type

    conf

  • DOI
    10.1109/PESC.1998.703403
  • Filename
    703403