Title :
Predictive And Efficient Modeling Of Substrate Currents In N-channel MOS-Transistors
Author :
Meinerzhagen, B. ; Jungemann, C. ; Decker, S. ; Keith, S. ; Yamaguchi, S. ; Goto, H.
Keywords :
Accuracy; Doping profiles; Electrons; Hydrodynamics; MOS devices; Monte Carlo methods; Particle scattering; Predictive models; Random access memory; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614765
