DocumentCode :
3268270
Title :
Optimal control for increasing throughput in low pressure chemical vapor deposition
Author :
Song, Lijiian ; Shen, Sisan ; Tsakalis, Kostas S. ; Crouch, Peter E. ; Cale, T.S.
Author_Institution :
Center for Syst. Sci. & Eng., Arizona State Univ., Tempe, AZ, USA
Volume :
4
fYear :
1996
fDate :
11-13 Dec 1996
Firstpage :
4831
Abstract :
We present the application of optimal control theory to the process of low pressure chemical vapor deposition (LPCVD) on patterned surfaces. An optimally controlled CVD protocol is developed by employing an approximate feature scale model, based on the simultaneous one-dimensional Knudsen diffusion and chemical reaction description of LPCVD, for the specific problem of maximizing throughput for a specified step coverage. The corresponding control conditions for the reactor are obtained by an adaptive solution of the inverse problem for the reactor scale model. Rigorous process simulations demonstrate that the computed temperature and partial pressure trajectories provide good step coverage
Keywords :
chemical vapour deposition; optimal control; process control; temperature control; adaptive solution; approximate feature scale model; chemical reaction description; control conditions; inverse problem; low pressure chemical vapor deposition; optimal control theory; partial pressure trajectories; patterned surfaces; simultaneous one-dimensional Knudsen diffusion; temperature trajectories; throughput maximisation; Adaptive control; Chemical vapor deposition; Computational modeling; Inductors; Inverse problems; Optimal control; Programmable control; Protocols; Temperature; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Decision and Control, 1996., Proceedings of the 35th IEEE Conference on
Conference_Location :
Kobe
ISSN :
0191-2216
Print_ISBN :
0-7803-3590-2
Type :
conf
DOI :
10.1109/CDC.1996.577701
Filename :
577701
Link To Document :
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