Ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors

Author

Böttcher, E.H. ; Dröge, E. ; Bimberg, D. ; Kuhl, D. ; Frahm, J. ; Venus, E.B. ; Portnoi, E.L.

Author_Institution

Inst. fur Festkorperphys. I, Tech. Univ. Berlin, Germany

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

319

Abstract

Metal-semiconductor-metal photodetectors with interdigital electrode patterns are very attractive for applications in ultrafast optoelectronics and electronics such as high-speed switching and signal processing. Here, we shall demonstrate the great potential of ion-implantation for improving the bandwidth of InGaAs MSM photodetectors. The epitaxial layer sequence of the InGaAs MSM photodetector device under study is grown by LP-MOCVD on semi-insulating InP substrates

Keywords

III-V semiconductors; electro-optical switches; electrodes; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; metal-semiconductor-metal structures; optical fabrication; photodetectors; vapour phase epitaxial growth; InGaAs; InGaAs MSM photodetector bandwidth; InGaAs MSM photodetector device; InP; LP-MOCVD epitaxial growth; epitaxial layer sequence; high-speed signal processing; high-speed switching; interdigital electrode patterns; ion-implantation; semi-insulating InP substrates; ultrafast ion-implanted InGaAs metal-semiconductor-metal photodetectors; ultrafast optoelectronics; Bandwidth; Electrodes; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; Photoconductivity; Photodetectors; Pulse measurements; Schottky barriers; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645445

Filename

645445