GaInNAs/GaAs long wavelength VCSELs-design and expected characteristics

Author

Miyamoto, Tomoyuki

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

1997

fDate

10-13 Nov 1997

Firstpage

323

Abstract

A long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of the key devices for future optical communication and interconnection systems. GaInNAs is a very attractive material for 1.3-1.55 μm long wavelength lasers because of its potential of lattice matching to GaAs and good temperature characteristics due to large conduction band discontinuity In this paper, we present a design and theoretical characteristics of long wavelength GaInNAs-GaAs QW VCSELs

Keywords

III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; laser cavity resonators; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 to 1.55 mum; GaInNAs-GaAs; GaInNAs-GaAs QW VCSELs; GaInNAs-GaAs long wavelength VCSELs; future optical communication; good temperature characteristics; large conduction band discontinuity; lattice matching; long wavelength lasers; long wavelength vertical cavity surface emitting laser; optical interconnection systems; Conducting materials; Gallium arsenide; Laser theory; Lattices; Optical fiber communication; Optical materials; Optical surface waves; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.645447

Filename

645447