Title :
GaInNAs/GaAs long wavelength VCSELs-design and expected characteristics
Author :
Miyamoto, Tomoyuki
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of the key devices for future optical communication and interconnection systems. GaInNAs is a very attractive material for 1.3-1.55 μm long wavelength lasers because of its potential of lattice matching to GaAs and good temperature characteristics due to large conduction band discontinuity In this paper, we present a design and theoretical characteristics of long wavelength GaInNAs-GaAs QW VCSELs
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; laser cavity resonators; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 1.3 to 1.55 mum; GaInNAs-GaAs; GaInNAs-GaAs QW VCSELs; GaInNAs-GaAs long wavelength VCSELs; future optical communication; good temperature characteristics; large conduction band discontinuity; lattice matching; long wavelength lasers; long wavelength vertical cavity surface emitting laser; optical interconnection systems; Conducting materials; Gallium arsenide; Laser theory; Lattices; Optical fiber communication; Optical materials; Optical surface waves; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.645447
