Title :
AC Charge Centroid Model For Quantization Of Inversion Layer In N-MOSFET
Author :
King, Ya Chin ; Fujioka, Hiroshi ; Kamohara, Shiroo ; Lee, Wen-Chin ; Hu, Chenming
Keywords :
Analytical models; Capacitance; Capacitance-voltage characteristics; Circuit simulation; Integrated circuit modeling; MOSFET circuits; Poisson equations; Quantization; Schrodinger equation; Semiconductor process modeling;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614768
