A 2.7 V 900 MHz CMOS LNA and mixer

Author

Karanicolas, A.N.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

fYear

1996

fDate

10-10 Feb. 1996

Firstpage

50

Lastpage

51

Abstract

The demand for portable wireless communications systems increases the focus on radio frequency (RF) IC implementations. At the same time, fine-line CMOS process technologies offer potential for RF applications. This 2.7 V, 900 MHz, CMOS low-noise amplifier (LNA) and mixer employs a current reuse technique that increases amplifier transconductance for the LNA and mixer without increasing power dissipation, compared to standard topologies. The increased transconductance plays a key role in reducing noise figure (NF) and increasing gain.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; integrated circuit noise; 2.7 V; 900 MHz; LNA; current reuse; fine-line CMOS process technology; gain; low-noise amplifier; mixer; noise figure; portable wireless communications; power dissipation; radio frequency IC; transconductance; CMOS process; CMOS technology; Low-noise amplifiers; Power dissipation; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits; Topology; Transconductance; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1996. Digest of Technical Papers. 42nd ISSCC., 1996 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3136-2

Type

conf

DOI

10.1109/ISSCC.1996.488509

Filename

488509