Title :
A Complete Asymmetric Drain Current Model For Post-stress Submicron pMOSFET´s
Author :
Chen, Young-Shying ; Jang, Sheng-Lyang
Keywords :
Circuit simulation; Degradation; Equivalent circuits; Hot carrier effects; Hot carriers; MOSFET circuits; Predictive models; Stress; Threshold voltage; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614769
