Title :
RF and microwave power amplification using SiGe HBTs: issues and prospects
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
A comprehensive study on the correlation between the structures and operation conditions of SiGe power HBTs, for RF and microwave power amplification, is presented. Both theoretical and experimental data prove that the operation configuration, power amplification frequency and bias voltage of SiGe power HBTs critically depend on the device heterostructure design. It is also proven that employing a heat transfer counterbalanced layout structure can effectively improve the RF power performance of SiGe power HBTs. The application prospects of SiGe HBTs for high frequency RF and microwave power amplification are projected, based on this study.
Keywords :
Ge-Si alloys; heat transfer; heterojunction bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor materials; RF power amplification; SiGe; bias voltage; heat transfer counterbalanced layout structure; heterostructure design; microwave power amplification; power HBT; power amplification frequency; structure/operation conditions correlation; BiCMOS integrated circuits; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Power engineering and energy; Radio frequency; Silicon germanium; Telephone sets; Voltage;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435263
