Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Author

Wang, Dong ; Ninomiya, Masaharu ; Nakamae, Masahiko ; Nakashima, Hiroshi

Author_Institution

Art. Sci. & Technol. Center for Cooperative Res., Kyushu Univ., Fukuoka, Japan

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2148

Abstract

Interface states intensity (Nss) and minority carrier generation lifetime (τ_g) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and metal-oxide-semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ_g on St-Si thickness (d_Si) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τ_g of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

Keywords

MIS devices; carrier lifetime; deep level transient spectroscopy; interface states; minority carriers; silicon; DLTS; Ge-Si; MOS; St-Si MOS; bulk Si MOS; deep level transient spectroscopy; electrical measurements; gate film fabrication; interface states intensity; metal-oxide-semiconductor; minority carrier generation lifetime; strained Si/SiGe wafers; transient capacitance method; wafer quality; Art; Capacitance; Capacitance-voltage characteristics; Electric variables measurement; Electrodes; Germanium silicon alloys; Interface states; Semiconductor films; Silicon germanium; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435268

Filename

1435268