• DocumentCode
    3269178
  • Title

    Development of high fMAX SiGe HBT with air-bridge

  • Author

    Li, Kaicheng ; Liu, Daoguang ; Liu, Rongkan ; Zhang, Jiang ; Li, Rongqiang ; Liu, Luncai ; Xu, Wanjing ; He, Kaiquan ; Liu, Yukui ; Xu, Shiliu ; Hu, Gagnyi ; Xu, Xueliang ; Chen, Guangbing ; Koenig, Ulf ; Gruhle, Adreas ; Kibbel, Horst ; Zeiler, Ulrich

  • Author_Institution
    Nat. Labs of Analog IC, Chongqing, China
  • Volume
    3
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    2151
  • Abstract
    In this paper. a SiGe HBT was described, which was based on a unique process technology. To characterize the SiGe HBT, HP85 10C network analyzer, HP83650A synthetic signal sources, HP8517b S parameter measuring systems etc. have been used for measuring radiofrequency performance of SiGe HBT. The measurements showed satisfactory results. The SiGe HBT cutoff frequency fT is 108 GHz, and the maximum oscillation frequency is 157 GHz.
  • Keywords
    Ge-Si alloys; S-parameters; heterojunction bipolar transistors; radiofrequency integrated circuits; 108 GHz; 157 GHz; Ge-Si; HP83650A synthetic signal sources; HP85 10C network analyzer; HP8517b S parameter measuring systems; SiGe HBT; air bridge; maximum oscillation frequency; radiofrequency performance; Capacitance; Cutoff frequency; Doping; Electrical resistance measurement; Etching; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Morphology; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435269
  • Filename
    1435269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3269178