Title :
Characterization and properties of lanthanum-substituted bismuth titanate ferroelectric thin films for FeRAM application
Author :
Xie, Dan ; Ren, Tianling ; Zhang, Zhigang ; Liu, Litian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
In the paper, polycrystalline and c-orientated Bi3.4La0.6Ti3O12 (BLT) thin films with uniform composition and thickness were prepared on Si and Pt/Ti/SiO2/Si substrates using a modified sol-gel technique. X-ray diffraction (XRD) studies indicated the formation of the Bi-based layered structure for BLT. The microstructure and surface morphologies of thin films significantly vary with the type of substrates. The grain growth and orientation of BLT thin films in different substrates intensively affect on the ferroelectric properties. The remanent polarization (Pr) of BLT thin films on Pt/Ti/SiO2/Si and Si substrates is about 1.23 μC/cm2 and 4.54 μC/cm2, respectively. The higher the c-axis orientation ratio of BLT films, the less the value of Pr is. The fatigue properties remain nearly constant after 1.44×1012 switching cycles. It indicates that lanthanum-substituted bismuth titanate is a kind of candidate material for FeRAM application.
Keywords :
X-ray diffraction; bismuth compounds; crystal microstructure; ferroelectric thin films; grain growth; lanthanum compounds; random-access storage; sol-gel processing; surface morphology; BLT thin films; Bi3.4La0.6Ti3O12; FeRAM application; X-ray diffraction; c-axis orientation ratio; c-orientated thin films; ferroelectric properties; ferroelectric thin films; grain growth; grain orientation; lanthanum-substituted bismuth titanate; microstructure; modified sol-gel technique; polycrystalline thin films; remanent polarization; surface morphologies; Bismuth; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Random access memory; Semiconductor thin films; Titanium compounds; Transistors; X-ray diffraction; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435281
