The effect of calcination temperature on nanosized tin oxide thin film

Author

Liu, Xiaodi ; Zhang, Dacheng ; Li, Ting ; Wei, Wang ; Dayu, Tian ; Kui, Luo

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

3

fYear

2004

fDate

18-21 Oct. 2004

Firstpage

2214

Abstract

The effect of calcination on nanosized tin oxide film prepared by direct current reactive magnetron sputtering is investigated. The tin oxide semiconductors were calcined at different temperatures ranging from 400°C to 900°C. The testing results from SEM, XRD, XPS and the HP4145B semiconductor analyzer show that the composition, crystallinity and the resistance of the thin films change with the variation of calcination temperature.

Keywords

X-ray diffraction; X-ray photoelectron spectra; calcination; electric resistance; nanotechnology; scanning electron microscopy; sputtering; thin films; tin compounds; 400 to 900 degC; HP4145B semiconductor analyzer; SEM; XPS; XRD; calcination temperature; crystallinity; direct current reactive magnetron sputtering; nanosized tin oxide thin film; resistance; tin oxide semiconductors; Calcination; Magnetic semiconductors; Semiconductor device testing; Semiconductor films; Semiconductor thin films; Sputtering; Temperature distribution; Tin; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435284

Filename

1435284