DocumentCode :
3269555
Title :
Novel microwave-induced zero-resistance states in the two-dimensional electron system
Author :
Mani, R.G.
Author_Institution :
Gordon McKay Lab., Harvard Univ., Cambridge, MA, USA
Volume :
3
fYear :
2004
fDate :
18-21 Oct. 2004
Firstpage :
2236
Abstract :
We examine zero resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices at low magnetic fields, in the large filling factor limit, below the quantum Hall regime. Zero-resistance states are exhibited about B=(4/5)Bf and B=(4/9)Bf where Bf = 2πfm*/e, m* is the electron effective mass, e is electron charge, and f is the microwave frequency. In this instance, the absence of backscattering appears to be associated with an ordinary Hall effect, unlike the typical quantum Hall situation. The dependence of the effect is reported as a function of electromagnetic wave frequency, the temperature, and other experimental variables.
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; gallium arsenide; microwave devices; semiconductor heterojunctions; two-dimensional electron gas; 2D electron system; GaAs-AlGaAs; Hall effect; electromagnetic wave excitation; electron charge; electron effective mass; large filling factor limit; low magnetic fields; microwave frequency; microwave-induced zero-resistance states; quantum Hall regime; ultra high mobility heterostructure devices; Backscatter; Effective mass; Electromagnetic scattering; Electrons; Filling; Gallium arsenide; Hall effect; Magnetic fields; Microwave devices; Microwave frequencies;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
Type :
conf
DOI :
10.1109/ICSICT.2004.1435289
Filename :
1435289
Link To Document :
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