GaAs monolithic 1.5-2.5 GHz image rejection receiver

Author

Bóveda, Angel ; Bonato, G. Luca ; Ripollés, Olga

Author_Institution

Telettra Espana SA, Madrid, Spain

Volume

1

fYear

1992

fDate

10-13 May 1992

Firstpage

232

Abstract

The design and performance of a microwave receiver design using GaAs monolithic technology are described. The receiver has been designed for use in digital radio links at 1.5-2.5 GHz. Its main features are its low noise figure and image frequency rejection. The receiver consists of two GaAs chips; a low-noise amplifier (LNA) and an image rejection mixer. The LNA achieves 19-dB gain with an associated noise figure of 1.7 dB. The image rejection mixer allows 20 dB of image suppression. The whole receiver exhibited a total gain greater than 31 dB and an associated noise figure lower than 2.5 dB over a 1-GHz bandwidth

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; digital radio systems; field effect integrated circuits; gallium arsenide; microwave amplifiers; mixers (circuits); radio receivers; 1 GHz; 1.5 to 2.5 GHz; 1.7 dB; 19 dB; 2.5 dB; 31 dB; GaAs; LNA; UHF; bandwidth; digital radio links; features; image frequency rejection; image rejection mixer; image rejection receiver; image suppression; low-noise amplifier; microwave receiver; noise figure; semiconductors; two chip set; Frequency; Gallium arsenide; Impedance; Integrated circuit noise; Low-noise amplifiers; MESFETs; Microwave technology; Noise figure; Radiofrequency amplifiers; Receivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992. ISCAS '92. Proceedings., 1992 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0593-0

Type

conf

DOI

10.1109/ISCAS.1992.229971

Filename

229971