Title :
Transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures
Author_Institution :
Jiangsu F´´rovincial Key Lab. of Photonic & Electron. Mater. Sci. & Technol., Nanjing Univ., China
Abstract :
Classical transport and magnetotransport of the two-dimensional electron gas (2DEG) in modulation-doped AlxGa1-xN/GaN heterostructures have been investigated. In magnetotransport measurements at low temperatures and high magnetic fields, strong Shubnikov-de Hass (SdH) oscillations with double periodicity are clearly observed, indicating the 2DEG occupation of the double subbands in the triangular quantum well at the heterointerfaces. Based on the observation of the SdH oscillation with double periodicity, the sheet concentrations and the mobilities of the 2DEG in the first and the second subbands, magneto-intersubband scattering (MIS) oscillations of the 2DEG, and the spin splitting of the 2DEG in the quantum well at the heterointerfaces are studied and discussed.
Keywords :
Shubnikov-de Haas effect; aluminium compounds; electron mobility; electron transport theory; gallium compounds; galvanomagnetic effects; quantum well devices; semiconductor doping; semiconductor heterojunctions; semiconductor technology; two-dimensional electron gas; 2DEG; AlGaN-GaN; Shubnikov-de Hass oscillations; aluminium gallium nitride/gallium nitride heterostructures; classical transport; double periodicity; heterointerfaces; magneto-intersubband scattering oscillations; magnetotransport; mobility; modulation doping; sheet concentration; spin splitting; triangular quantum well; two-dimensional electron gas; Capacitance-voltage characteristics; Capacitive sensors; Electrons; Epitaxial layers; Gallium nitride; Materials science and technology; Photonics; Piezoelectric polarization; Temperature; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435304
